| PART |
Description |
Maker |
| APT26F120B2 APT26F120L |
N-Channel FREDFET 1200V, 26A, 0.65Ω Max, trr ?35ns
N-Channel FREDFET 1200V, 26A, 0.65ヘ Max, trr ÷335ns
|
Microsemi Corporation
|
| APT5020 APT5020SVR |
24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 26A 0.200 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| IRFK4HE50 |
800V,26A,N-Channel HEXFET Power MOSFET(800V,26A,N沟道 HEXFET 功率MOS场效应管) 800V的，26A，N沟道HEXFET功率MOSFET00V的，26A条，沟道的HEXFET功率马鞍山场效应管）
|
International Rectifier, Corp.
|
| APT12080LVR |
POWER MOS V 1200V 16A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| STU26NM60 STU26NM60I |
26 A, 600 V, 0.135 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 26A I(D) | TO-220VAR 晶体管| MOSFET的| N沟道| 600V的五（巴西）直|6A条（丁）|20VAR
N-CHANNEL 600V 0.125 OHM 26A TO-247/MAX220/MAX220I ZENER-PROTECTED MDMESH POWER MOSFET
|
STMICROELECTRONICS
Integrated Device Technology, Inc.
SGS Thomson Microelectronics
|
| APT12067B2LL APT12067LLL |
POWER MOS 7 1200V 18A 0.670 Ohm
|
Advanced Power Technology
|
| CRNA20-600PT CRNB20-400 CRNB20-400PT CRNA20-400 CR |
20Amp - 400/600/800/1200V - RECTIFIER
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| ISL9R8120S3S ISL9R8120P2 ISL9R8120S3ST ISL9R8120P2 |
8A, 1200V STEALTH DIODE, TO220AC PACKAGE
8A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE
8A, 1200V StealthDiode 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB
8A/ 1200V Stealth Diode
8A, 1200V Stealth⑩ Diode
8A, 1200V Stealth?/a> Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| RJK4007DPP-M0 RJK4007DPP-M0-T2 |
Silicon N Channel MOS FET High Speed Power Switching
7.6 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220FL, 3 PIN
|
Renesas Electronics Corporation
|
| FRK9260R FRK9260D FRK9260H |
26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs 26 A, 200 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE
26A/ -200V/ 0.200 Ohm/ Rad Hard/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
|
| IRFP26N60LPBF |
HEXFET Power MOSFET ( VDSS = 600V , RDS(on)typ. = 210mΩ , Trr typ. = 170ns , ID = 26A )
HEXFET Power MOSFET ( VDSS = 600V , RDS(on)typ. = 210mヘ , Trr typ. = 170ns , ID = 26A )
|
International Rectifier
|
